2SK3211(l), 2SK3211(s) silicon n channel mos fet high speed power switching ade-208-761a (z) 2nd. edition february 1999 features low on-resistance r ds = 60 m w typ. high speed switching 4 v gate drive device can be driven from 5 v source
2SK3211 2 outline 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 ldpak g d s absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 200 v gate to source voltage v gss 20 v drain current i d 25 a drain peak current i d(pulse) * 1 100 a body-drain diode reverse drain current i dr 25 a avalanche current i ap * 3 25 a avalanche energy e ar * 3 41 mj channel dissipation pch * 2 100 w channel temperature tch 150 c storage temperature tstg C55 to +150 c note: 1. pw 10 m s, duty cycle 1% 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2SK3211 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 200 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltege drain current i dss 10 m av ds = 200 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.5 v i d = 1 ma, v ds = 10 v r ds(on) 6075m w i d = 15 a, v gs = 10 v* 4 static drain to source on state resistance r ds(on) 6585m w i d = 15 a, v gs = 4 v* 4 forward transfer admittance |y fs |1830s i d = 15 a, v ds = 10 v * 4 input capacitance ciss 2420 pf output capacitance coss 790 pf reverse transfer capacitance crss 340 pf v ds = 10 v v gs = 0 f = 1 mhz turn-on delay time t d(on) 20ns rise time t r 230 ns turn-off delay time t d(off) 590 ns fall time t f 330 ns i d = 15 a, v gs = 10 v r l = 2 w bodyCdrain diode forward voltage v df 0.95 v i f = 25 a, v gs = 0 bodyCdrain diode reverse recovery time t rr 230 ns i f = 25 a, v gs = 0 dif/ dt = 50 a/ m s note: 4. pulse test
2SK3211 4 main characteristics 40 30 20 10 0 50 100 150 200 100 3 10 1 0.1 0.01 12 10 20 100 20 16 12 8 4 0 12345 0 2 46810 ta = 25 ? tc = 75? 25? ?5? channel dissipation pch (w) case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics operation in this area is limited by r ds(on) v = 10 v pulse test ds 100 ? 1 ms pw =10 ms (1shot) dc operation (tc = 25?) 10 ? 50 40 30 20 10 3.5 v 3 v v =2.5 v gs 10 v pulse test 6 v 4 v 0.3 0.03 500 30 5 50 200
2SK3211 5 1 10 100 2 50 500 20 50 10 250 200 150 100 50 ?0 0 40 80 120 160 0 0.1 0.3 1 3 10 30 100 50 20 5 10 1 2 0.5 20 5 2.5 2.0 1.5 1.0 0.5 0 48 12 16 20 i = 15 a d 5 a 10 a 200 100 v = 4 v gs 10 v v = 4 v gs 10 v 25 ? tc = ?5 ? 75 ? gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on ) drain to source saturation voltage drain current i (a) d drain to source on state resistance r ( m ) w ds(on) static drain to source on state resistance vs. drain current case temperature t c (?) ds(on) r ( m ) static drain to source on state resistance w static drain to source on state resistance vs. temperature drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current pulse test pulse test v = 10 v pulse test ds pulse test 5,10,15 a 5,10,15 a
2SK3211 6 0.1 0.3 1 3 10 30 100 01020304050 2000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 40 80 120 160 200 0 1000 500 50 100 20 10 200 200 1000 20 100 10 0.1 0.2 1 2 10 20 di / dt = 50 a / ? v = 0, ta = 25 ? gs 10 20 50 v = 0 f = 1 mhz gs ciss coss crss i = 20 a d v gs v ds v = 150 v 100 v 50 v dd t f r t d(on) t d(off) t reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics v = 10 v, v = 30 v pw = 5 ?, duty < 1 % gs dd v = 150 v 100 v 50 v dd 50 500 0.5 5 5000
2SK3211 7 20 16 12 8 4 0 0.2 0.4 0.6 0.8 1.0 v = 0, ? v gs 10 v 5 v 50 40 30 20 10 25 50 75 100 125 150 0 d. u. t rg i monitor ap v monitor ds v dd 50 w vin 15 v 0 i d v ds i ap v (br)dss l v dd e = ?l ?i 2 1 v v ?v ar ap dss dss dd 2 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage pulse test channel temperature tch (?) repetive avalanche energy e (mj) ar maximun avalanche energy vs. channel temperature derating avalanche waveform avalanche test circuit i = 25 a v = 50 v duty < 0.1 % rg > 50 ap dd w
2SK3211 8 vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit waveform 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 1.25 ?/w, tc = 25 ? q g q q tc = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width
2SK3211 9 package dimensions unit: mm 10.2 ?0.3 (1.4) 8.6 ?0.3 1.27 ?0.2 1.2 ?0.2 2.54 ?0.5 11.3 ?0.5 (1.5) 0.86 +0.2 ?.1 3.0 +0.3 ?.5 0.76 ?0.1 10.0 +0.3 ?.5 2.54 ?0.5 4.44 ?0.2 1.3 ?0.2 2.59 ?0.2 0.4 ?0.1 11.0 ?0.5 10.2 ?0.3 (1.4) 8.6 ?0.3 1.27 ?0.2 2.54 ?0.5 (1.5) 0.86 +0.2 ?.1 10.0 +0.3 ?.5 2.54 ?0.5 4.44 ?0.2 1.3 ?0.2 2.59 ?0.2 0.4 ?0.1 1.2 ?0.2 (1.5) 0.1 +0.2 ?.1 l type s type hitachi code eiaj jedec ldpak
2SK3211 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to:
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